PART |
Description |
Maker |
UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
|
NEC[NEC]
|
UPA1911TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
UPA1914TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
UPA1915TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
UPA507TE-T2 |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET 42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC Corp. NEC[NEC]
|
2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
UPA1792G-E1 UPA1792G-E2 |
N-ch P-ch enhancement type power MOS FET
|
NEC
|
UPA1709G-E2 UPA1709G-E1 |
Nch enhancement type power MOS FET
|
NEC
|
UPA1708G-E1 UPA1708G-E2 UPA1708G-AZ |
7 A, 40 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET SOP-8 Nch enhancement type power MOS FET
|
Unisonic Technologies Co., Ltd. NEC
|
FX30KMJ-03 FX30KMJ-03-A8 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|